For a metal-sio2-si capacitor having na 5 x 1016 cm-3

Question

1. Plot the band diagram of an ideal MOS diode with n-type substrate at V_G = V_T.

2. Plot the band diagram of an n*-polysilicon-gated MOS diode with p-type substrate at flat-band condition.

3. For a metal-SiO₂-Si capacitor having N_A = 5 x 10¹⁶ cm^-3, calculate the maximum width of surface depletion region.

4. For an ideal Si-SiO₂ MOS diode with d = 5 nm, N_A = 10¹⁷ cm^-3, find the applied voltage and the electric field at the interface required to make the silicon surface intrinsic.