Consider a si phtodiode that is designed for operation at


a) Consider three dielectric media with flat and parallel boundaries with refractive indices n1, n2, and n3. Show that for normal incidence the reflection coefficient between layers 1 and 2 is the same as that between layers 2 and 3 if
\(n_2=[n_1n_3]^.5\)
What is the significance of this result?

b) Consider a Si phtodiode that is designed for operation at 900 nm. GIven a choice of two possible AR coatings, SiO2 with a refractive ndex of 1.4 and TiO2 with a refractive index of 2.3, which would you use and what would be the thickness of the AR coating? The refractive index of Si is 3.5. Explain your decision.

c) COnsider a Ge photodiode that is designed for operation around 1200 nm. What are the best AR coating refractive index and thickness if the refractive index of Ge is about 4.0?

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Electrical Engineering: Consider a si phtodiode that is designed for operation at
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