Question 1:-A p-well is to be formed for a CMOS process. The n-type substrate has a doping level of 2×?10?^15 ?cm?^(-3).the hole concentration at the surface of the well is to be ?10?^16 ?cm?^(-3), and well -substrate metallurgical junction is to lie 5µm below the silicon surface .the well is to be formed by a boron ion implant at 100KeV followed by a long drive -in at 1150°C.specify the dose for the ion implant and the time required for the drive -in.Assume that all the implanted boron is concentrated at the silicon surface before the drive in .is this a good approximation from the viewpoint of finding the doping profile after the drive-in Explain why?