An n-p-n transistor has impurity concentrations of 2x10^20 cm-3 in the emitter, 1x10^18 cm -3 in the base and 2x10^16 cm-3 in the collector. Assume the metallurgical base width is 150nm and the metallurgical emitter width is 200nm. The minority carrier mobility and lifetime in the emitter are 180 cm2/Vs and 5x10^-8 sec respectively; and
the diffusion constant and the life-time of the minority carriers in the base region are 25 cm2/V and 1x10^-6 sec respectively. The emitter-base voltage is -0.7V. Calculate the output resistance of the device, dIC/dVC, for 0