A n+/p hetero junction diode of the same donor and acceptor dopant concentrations and areas as the Si homo junction diode above is known to have a layer of interfacial traps located at the metallurgical boundary. What is lowest density (trap/cm2) detectable using the current transient and the capacitance transient?
Assuming a capacitance noise of 0.1fF and a current noise of 0.1 fA.
At what temperatures would you use these two methods to get maximum sensitivity and sufficiently slow decay to allow the use of highly sensitive but slow capacitance and current meters.?