Assuming a unilateral device use these results to find the, Electrical Engineering

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Assuming a unilateral device use these results to find the

Given the scattering parameters for an FET, derive expressions for the parameters of the equivalent circuit model of Figure 11.21, assuming a unilateral device. Use these results to find the equivalent circuit parameters for the HEMT device whose scattering parameters are given in Table 11.7, at a frequency of 2.0 GHz. Ignore S12.

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Electrical Engineering: Assuming a unilateral device use these results to find the

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Electrical Engineering: Assuming a unilateral device use these results to find the

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