Assume that the gate oxide overlaps both the source and, Physics

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Assume that the gate oxide overlaps both the source and

An n-channel MOSFET has the following parameters:

Assume the transistor is biased in the saturation regian at V_GS = 4 V. (01 Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 µm. If a lead resistance of R_L = I0 kΩ is connected to the output. Calculate the cutoff frequency.

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