assume that an abrupt si p-n junction with area, Electrical Engineering

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assume that an abrupt si p-n junction with area

Assume that an abrupt Si p-n junction with area 10-4 cm2 has NA=10¹⁷/cm³ and ND=10¹⁷/cm³ is working at room temperature. It is given that μ_n = 700 cm²/v-s, μ_P =250 cm2/ V-s and ζ_n- ζ_P = 1 μ_s. Assume that minority carrier mobility is same as the majority carrier mobility, Neglecting any recombination in the SCR region, determine:

(a) What will be current if the diode has a forward bias of 0.7V?

(b) What will be current if the diode has a reverse bias of 0.7V?

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Electrical Engineering: assume that an abrupt si p-n junction with area

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Electrical Engineering: assume that an abrupt si p-n junction with area

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