An n-type silicon substrate with doping density of 1015, Electrical Engineering

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An n-type silicon substrate with doping density of 1015

an N-type silicon substrate with doping density of 10¹⁵ cm^-3 Arsenic is to be converted in tp p-type by Boron diffusion so the resistivity at T=75C is 5Ω-cm all atoms are fully ionized
a)calculate the doping level?
b)calculate the resistivity at room temperature ?

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Electrical Engineering: An n-type silicon substrate with doping density of 1015

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Electrical Engineering: An n-type silicon substrate with doping density of 1015

Reference No:- TGS0620239

Have a Question? (oR Write a Review)

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Reference No:- TGS0620239

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