An mos transistor with an aluminum gate is fabricated on a


An MOS transistor with an aluminum gate is fabricated on a p-type silicon substrate. The oxide thickness is tox = 750 A, and the equivalent fixed oxide charge is Q'ss = 1011 cm2. The measured threshold voltage is VT = +0.80 V. Determine the p-type doping concentration.

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Physics: An mos transistor with an aluminum gate is fabricated on a
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