An ideal non-degenerate silicon step junction diode with an intrinsic level Ei exactly at mid band-gap is fabricated. Answer all questions related to this diode.
a) If Vbi = 0.65V and NA=4ND, what is the doping concentration in the quasi neutral n and p regions of the diode?
b) Determine the location of the Fermi level for this diode and sketch the energy band diagram that characterizes the device. Note the energy difference between Ei and EF in the quasi-neutral regions of the diode.
c) What fraction of the depletion width extends into the n region of the diode in equilibrium?