A uniformly doped n-type silicon bar doped nd 1016cm3 of, Electrical Engineering

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A uniformly doped n-type silicon bar doped nd 1016cm3 of

A uniformly doped n-type silicon bar doped ND =10¹⁶/cm³ of length L is illuminated to create10¹¹/cm³ excess electron-hole pairs at x=0.The illumination wavelength does not allow the light to penetrateinto the interior (x>0) of the bar. An ohmic contract is formedat x=L that serves as a perfect sink for excess carries(i.e. excesscarrier concentration =0 at x=L) Assume( τp=10^-6 sec τn=10^-9sec Dp=34cm²/sec Dn =25cm2/sec and T = 300K)

Develop mathematical expressions and plot the electron and holeconcentrations for all x.

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Electrical Engineering: A uniformly doped n-type silicon bar doped nd 1016cm3 of

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Electrical Engineering: A uniformly doped n-type silicon bar doped nd 1016cm3 of

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Electrical Engineering: A uniformly doped n-type silicon bar doped nd 1016cm3 of

Reference No:- TGS0627251

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