a) A silicon step junction diode with NA acceptor atoms on the p side and ND donor atoms on the n side is fabricated. The diode is not ideal. What is the dominant current mechanism for forward applied voltages close to zero?
b) What is the origin of the reverse saturation current in an ideal diode?
c) A silicon n+ - p step junction diode with ND = 1016/cm3 concentration has a built in potential of 0.656V at room temperature. What is the peak value of the electric field in the depletion region?
d) For the diode in problem 2c above, what is the width of the depletion region?