A silicon p-n-p transistor has impurity concentrations of 5*10^18, 2*10^17, and 10^16 cm^-3, diffusion constants of minority carriers 52, 40, and 115 cm^2/s and minority lifetimes of 10^-8, 10^-7, and 10^-6 in the emitter, base, and collector, respectively. If the base width is 1*10^-6 m, the device cross-sectional area is 0.2 mm^2, and the emitter-base junction is forward bias to 0.5 V, calculate the current components \(I_{Ep}, I _{Cp}, I_{En}, I_{Cn}, and I_{BB}\)