A silicon ingot is doped with 1016 arsenic atomscm3 find


A silicon ingot is doped with 1016 arsenic atoms/cm3. Find the carrier concentrations and the Fermi level at room temperature (300K). Hint: assume complete ionization of impurity atoms at room temperature.

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Electrical Engineering: A silicon ingot is doped with 1016 arsenic atomscm3 find
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