A complementary pair of ideal n-channel and p-channel MOSFETs are to be designed to produce the same I-V characteristics when they are equivalently biased. The devices are to have the same oxide thickness of 250 Å and the sane channel length of L = 2 µm. Assume the SiO2 layer is ideal. The n-channel device is to have a channel width of w = 20 µm Assume constant inversion layer motilities of µn = 600 cm2/V-s and µp = 200 cm2/V-s
(a) Determine P-type and n-type substrate doping concentrations.
(b) What are the threshold voltages?
(c ) What is the width of the p-channel device?