1 the mosfet circuit in the figure below is used to perform

Question

1. The MOSFET circuit in the figure below is used to perform a DC Sweep analysis of the transistor. Given the results shown, determine the effective reverse saturation current for this transistor in its diode mode of operation.

2. The DC bias circuit in the figure below uses a PMOS transistor with the parameters as indicated. What operating region will apply for this transistor? Analyze the circuit and find the Q-point (Van Iso). You must show your analytical equations and their solutions.

3. The circuit in the figure below is a 4-R bias circuit for a 4-terminal NMOS transistor.

a. Analyze this circuit and determine the DC Q-point I_ns) of the transistor.

b. Perform a DC Bias simulation of this circuit in PSpice. How does the Q-point from your simulation compare with your analytical results in part a?

4. The circuit in the figure below is a basic MOSFET amplifier. Analyze this circuit and determine the following:

a. The DC Q-point (V_os, I_vo) of the transistor

b. The AC small-signal model parameters for the transistor (g., AO.

c. The expected output voltage (both DC and AC components), V_o

d. Perform a Time Domain PSpice simulation of this circuit and show a Probe plot of Vo as a function of time over the range of 0 - 50 ms. How does Vo compare with your analytical results in part c?

5. You are given a PNP transistor with the following bias voltages applied:

Vet; = -0.2 V and Virg = -0.6 V. In which of its four regions does it operate with these biases? What base, collector and emitter currents do you expect if the transistor has the following parameters: I_s = 10^-10 A,/lp = 166,4 = 3?

6. The NPN transistor in the circuit shown below has the parameters indicated in the PSpice model listing. Analyze this circuit and find the Q-point for the transistor (Vice, /_o). You may assume FAR. operation for the transistor, but do NOT assume a value for V,1. Since VAF ( for calculation of the Early effect) is not given in the model, you assume the default condition where VAF = on and the Early effect can be neglected here.

7. The PNP current mirror circuit shown in the figure below is constructed with two identical transistors having the parameters shown in the model listing. Determine the current through the load resistor (RL) to three significant figures. You may assume FAR. operation for the transistor, but make NO assumptions about the emitter-base voltage in this circuit, and don't neglect the Early effect here.

Answer 1

By applying the electrical laws and principles and as well by considering the circuit diagrams illustrated in the assignment; respond to the following numerical. 1) The MOSFET circuit in the figure is employed to carry out a DC Sweep assessment of the transistor. Provided the results shown, illustrate the effective reverse saturation current for this transistor in its diode mode of operation. 2) The DC bias circuit in the figure employs a PMOS transistor having the parameters as pointed out. What operating area will implement for this transistor? Examine the circuit and determine the Q-point (Van Iso). You should exhibit your analytical equations and their solutions. 3) The circuit in the illustrated figure is a 4-R bias circuit for the 4-terminal NMOS transistor. a) Examine this circuit and find out the DC Q-point Ins of the transistor. b) Carry out DC Bias simulation of circuit in the PSpice. Explain how does Q-point from your simulation compare by analytical outcomes (a).