Excess minority carriers are injected within a thin slice of doped semiconductor of uniform cross-sectional region and are permitted to diffuse across the material. There diffusion coefficient for the material is 50cm2s-1 as well as the minority carrier lifetime is 20ns. Calculate the maximum thickness of the semiconductor slice when excess carrier recombination is not to exceed 5 percent of the injected charge.
When there are some useful terms given:
q = 1.6 x 10-19C, VT = kT/q = 26mV @ 3000k, and ni = 1.5 x 1010 cm-3 as well as mn = 1.5 x 103 cm2 V-1 s-1