A silicon wafer with thickness of 925 µm is being heated with a uniform heat flux at the lower surface. The silicon wafer has a thermal conductivity that varies with temperature and can be expressed as: k(T) = (a+bT+cT2) W/m.K, where a = 437, b = -1.29, and c= 0.00111. To avoid warping, the temperature difference across the wafer thickness cannot exceed 20C. if the upper surface of the silicon wafer is at a uniform temperature of 600 K; determine the maximum allowable heat flux.