Estimate diffusion current flowing from n-type semiconductor

A piece of homogenous semiconductor material that is n-type of length 100µm as well as uniform cross-sectional area of 5x10-4 cm2 having a doping concentration of 1017cm-3. There a linear gradient of carrier concentration exists along the material such which the concentration is 10 percent higher at one end and 10 percent lower at the other ending than the equilibrium concentration. Estimate the diffusion current flowing from the material when current flow is supposed to be because of majority carriers merely and the diffusion coefficient of 10cm2s-1.

If there is:

mn = 1.5 x 103 cm2 V-1 s-1, VT = kT/q = 26mV @ 3000k, and ni = 1.5 x 1010 cm-3 with q = 1.6 x 10-19C

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