Layout for Digital Circuits
Provide some significant Design methods you could follow when doing the Layout for Digital Circuits?
Expert
a) Within the digital design, choose height of the standard cells you wishes to layout. It depends on the size of your transistors. Have logical width for VDD and GND metal paths. Managing the uniform height for all cells is too significant as this shall help you to use the place route tool simply and also if you want to do the manual connection of all blocks it saves on lot of the area.
b) Utilize one metal in one direction only; this does not valid for the metal 1. Let you are using the metal 2 in order to do horizontal connections, then utilize the metal 3 for vertical connections, metal 4 for horizontal, metal 5 vertical and so on.
c) Keep as much substrate contact as possible within the empty spaces of layout.
d) Do not employ poly over the long distances since it has large resistances in case you have no other choice.
e) Employ the fingered transistors as and when you feel essential.
Explain the term ROM image.
Explain various addressing modes of 8051?
Write down the three different basic schemes of analog modulations?
Explain what is meant by the IMR or Interrupt mask register?
State some of the differences between high speed TTL and low power TTL?
I need some help with a project that I am doing. I am asked to make an inverter that can synchronise itself with a local power supply. The only information provided by my project supervisor was as follows: 1. Look at a method of cr
For the loaded base overdrive factor determine an expression, σL of the transistor within the inverter circuit demonstrated below in terms of the circuit parameters. So, write the expression within terms of the unloaded overdrive factor of it, σ
A bipolar junction diode contain a uniform cross-sectional region of 2x10-3 cm2 and a doping concentration of 1013 cm-3 in p-type and n-type both materials. Therefore diffusion properties are Dn = 5 cm2s-1, Ln = 50 µm for (e-
Read slides 05b spatially from slide 48 to slide 51. Complete signal grapgh on slide 48.
An n-p-n transistor contain the given properties are as follows:: Doping Concentrations: Ne = 1018 cm-3, Nb = 1017 cm-3, Nc = 1015 cm-3.
18,76,764
1953562 Asked
3,689
Active Tutors
1423456
Questions Answered
Start Excelling in your courses, Ask an Expert and get answers for your homework and assignments!!